AM1421P these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) (ohm) i d (a) 0.079 @ v gs = -4.5v -3.7 0.110 @ v gs = -2.5v -3.1 product summary -20 ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sc70-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds -20 v gs 8 t a =25 o c-3.7 t a =70 o c-3.0 i dm -10 i s 1.4 a t a =25 o c1.56 t a =70 o c0.81 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source curren t (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherw ise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbo l max i mum uni t s t <= 5 sec 80 steady-state 125 thermal resistance ratings parame te r o c/w maximum junction-to-ambient a r thja sc70-6 top view d d s d d g 1 2 3 6 5 4 s d g p-channel mosfet product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. c. repetitive rating, pulse width lim ited by junction temperature. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -0.4 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -5 a v gs = -4.5 v, i d = -3.7 a 79 v gs = -2.5 v, i d = -3.1 a 110 forward tranconductance a g fs v ds = -5 v, i d = -1.25 a 9 s diode forward voltage v sd i s = -0.46 a, v gs = 0 v -0.65 v total gate charge q g 7.2 gate-source charge q gs 1.7 ga t e - dr a i n ch a r g e q gd 1.5 turn-on delay time t d(on) 10 ris e time t r 9 turn-off delay time t d(off) 27 fall-time t f 11 drain-source on-resistance a specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static te s t conditions symbol parame te r limits r ds(on) m ? unit v dd = -10 v, i l = -1 a, v gen = -4.5 v, r g = 6 ? ns dynamic b v ds = -10 v, v gs = -4.5 v, i d = -3.7 a nc AM1421P product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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